LECC2003, Sep 29 - Oct 03
Development of the ELMB Development of the ELMB Henk Boterenbrood - - PowerPoint PPT Presentation
Development of the ELMB Development of the ELMB Henk Boterenbrood - - PowerPoint PPT Presentation
Development of the ELMB Development of the ELMB Henk Boterenbrood LECC2003, Sep 29 - Oct 03 ELMB: Embedded Local Monitor Board Credit-card sized plug-on board programmable: microcontroller (8-bit, 4MHz) communication: CAN-interface
LECC2003, Sep 29 - Oct 03
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ELMB: Embedded Local Monitor Board
Credit-card sized plug-on board
programmable: microcontroller (8-bit, 4MHz) communication: CAN-interface I/O
digital I/O 64-channel 16-bit ADC (optional), max 30 samples/s
firmware remotely upgradeable
General-purpose CAN-bus based standard building block for various control and monitoring tasks in the LHC experiments
(initially for ATLAS)
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Why develop the ELMB ?
Reduce design effort (hardware, software) by individual institutes Simplify spares and maintenance issues (15 years) Common solution for interfacing custom designs in a ‘standard’ way to the Detector Control System (DCS)
hardware and software (CANopen protocol on the CAN-bus)
No commercial solution to meet all requirements:
low power low cost high I/O density (connect many channels to one module) In-Application-Programmable (i.e. ‘on-detector’, via CAN-bus) not sensitive to magnetic field radiation tolerant
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Outline
ELMB status ELMB overview Some example applications Radiation tests
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ELMB: Status
After a few prototypes…
LMB
- ca. 40 produced
ELMB103 (with ATmega103 microcontroller)
- ca. 300 produced
Final design: ELMB128 (with ATmega128 microcontroller)
cheaper and more rad tolerant ELMB128A: with analog part ELMB128D: without analog part
Pre-series of 650 ELMB128 produced, end of 2002 Final production of 9000 pieces in preparation
ATLAS: 5800 LHC Rack & Gas Systems: 1800 Other LHC experiments: 1400
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ELMB128: Block Diagram
82C250 CAN Trans- ceiver
OPTO OPTO
Voltage Regulator
OPTO OPTO
64 chan MUX + CS5523 16-bit ADC
…. …. ….
Voltage Regulator Voltage Regulators
CAN GND CAN GND DIGITAL GND DIGITAL GND ANALOG GND ANALOG GND
4
±5V +3.3V +5V
SAE81C91 CAN controller
DIP switches
ATmega128L
microcontroller
- 128k Flash
- 4k RAM
- 4k EEPROM
- Bootloader
section
Analog In
VAP, VAG 5.5 to 12V, 10 mA VDP, VDG 3.5 V - 12V, 15 mA VCP, VCG 6 to 12V, 20 mA 32 CAN bus cable 4 3
Dig I/O (SPI) ISP, USART
Digital I/O
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ELMB: ELMB103 vs. ELMB128
microcontroller upgraded (self-programming, internal BOD)
ELMB103
jumpers obsolete RTC crystal removed voltage regulator removed (for external use) 2nd microcontroller no longer needed Brown-Out-Detection (BOD) circuit removed
ELMB128
current consumption (no activity)
- ca. 55 mA
- ca. 40 mA
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ELMB128: Microcontroller
ATMEL ATmega128L, 3.3V single clock cycle instructions (ELMB: 4 MHz) 128k In-System-Programmable Flash (1000x write/erase) 4k SRAM 4k EEPROM (100,000x write/erase)
- ptional Boot Code section (2, 4 or 8 k)
In-System-Programming by on-chip Bootloader program
4 timers
- n-chip 10 bit 8-chan ADC
… …
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ELMB128A: the board
CAN-transceiver
- pto-couplers
microcontroller DIP-switches CAN-controller analog multiplexors motherboard connectors ADC
- n ELMB128D:
backside empty… and frontside
- nly 2 instead
- f 5 opto-ICs
ISP/USART connector
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ELMB: Embedded…
… or ELMB integrated in system to monitor and control ELMB Application-Specific Motherboard…
with possibly signal-conditioning circuitry,
- pto-isolation,
ADCs, DACs, EEPROM/flash, connectors, etc…
(analog in)
Temperature Magnetic Field Voltages, Currents Thresholds (analog out) ON/OFF monitor (digital in) ON/OFF (digital out) I2C JTAG ………
e.g. for Frontend Electronics Configuration
CANopen CAN
Connection to Detector Control System
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ELMB: general-purpose Motherboard
analog input signal adapters
(available for PT100, NTC and voltages)
CAN (+power) Digital I/O analog in (2x16 ch) power
(ca. 300 produced)
ELMB with general-purpose CANopen application firmware and Bootloader (off production) analog in (2x16 ch)
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ELMB Application Example: Muon MDT
Magnetic Field Sensors NTC Temperature Sensors (10 to 20 per chamber, 30 max) CAN
ELMB
micro CAN
Bx ,By ,Bz ,T Bx ,By ,Bz ,T
B-sensor 1
MDT Front-end Electronics (CSM)
JTAG JTAG: electronics configuration DIG-I/O 3 CSM-ADC
MDT Chamber (ca. 1200x)
SPI- AUX
MDT-DCS module
Analog inputs (V, I, T, etc. 64 channels)
MDT/ ATLAS DCS
16-bit 24-bit
ADC ADC
24-bit
ADC
16-bit
ADC 5 SPI 5
(ca. 600 chambers equipped with two B-sensor modules each)
7
4
DIG-I/O 4 4 various functions (tbd) B-sensor 2 n.c.
ID ID
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ELMB Application Example: Muon MDT
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ELMB Application Example: Muon RPC
ELMB controls:
Temp sensors TTC Delay chips FPGA Flash prom FPGA Flash prom SPI I2C I/O registers Coincidence matrix ASIC (about 200 I2C
registers)
Optical link controls using JTAG and I2C protocols and Dig I/O
ELMB
(courtesy of S.Veneziano)
PAD board with TTCrx, ELMB, XCV200 and Optical Link
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ELMB Application Example: LHCb Muon
I2C I/O REG
ELMB0 ELMB1 ELMB2 ELMB3
I2C_local_bus
12
reset lines
12
Test_pulse signals
4 MBit Flash
SPI
4 MBit Flash
SPI
4 MBit Flash
SPI
4 MBit Flash
SPI
pwr_ctrl pwr_ctrl pwr_ctrl pwr_ctrl
0x21 I2C I/O REG 0x20
24A00 S/N Vers. 1010XXX
(courtesy of V.Bocci)
ELMB
Service Board Module
(for frontend electronics: configuration, etc)
Actel FPGA
0x72
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ELMB Radiation Tests
Radiation values guideline (calculated for ATLAS Muon Barrel)
- TID: 4.7 Gy
x 3.5 x 1 x 2 = 33 Gy = 3.3 kRad in 10 years
- NIEL: 3.0E10 n/cm2
x 5 x 1 x 2 = 3.0*1011 n/cm2 (1 MeV eq.) in 10 years
- SEE: 5.4E09 h/cm2
x 5 x 1 x 2 = 5.4*1010 h/cm2 (>20 MeV) in 10 years
NIEL (Non-Ionising Energy Loss)
reactor at ITN, Portugal, Feb 2003 3 ELMB128s unpowered, 2.0*1012 n/cm2 : OKAY 3 ELMB128s unpowered, 8.0*1012 n/cm2 : had to replace two voltage regulators per ELMB, then OKAY
- pto-couplers degraded: make sure to have margins in signal timing
(by software)
safety factor for simulated rad levels Low Dose Rate effect, factor 5: for COTS in non-homogeneous batches COTS mixed: factor 4, COTS homogeneous in preselection: factor 2 COTS homogeneous in production: factor 1
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ELMB Radiation Test: SEE / TID
CRC cyclotron, Louvain-la-Neuve (B), March 2003
(previous test with ELMB103 in 2001) 12 ELMB128s, each irradiated with at least 1.0*1011 p/cm2 corresponding to TID = 140 Gy Total fluence: 1.3*1012 p/cm2 (2001: fluence: 0.33*1012 p/cm2) ELMBs powered, running
‘standard’ firmware (doing ADC and digital I/O, CAN-bus message handling) additional periodic (every 5 s) checking of unused parts of memory and device registers, filled with bit patterns
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RadTest: TID (Total Ionising Dose)
ELMB128 ANALOG CURRENT
10 20 30 40 50 60 25 50 75 100 125 150 175 200 225 250 275 TID (Gy)
Current (mA)
A013 A015 A017 A021 A022 A024 A062 A097 A481 A482 A483 A484
- Currents of Digital and CAN sections of ELMB128 were not affected
- Reprogramming of Flash memory fails (needs further tests: when does it fail!)
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RadTest: Systematic SEE in SRAM
SEE in 2048 bytes of SRAM
500 1000 1500 2000 2500 0.0E+00 2.0E+11 4.0E+11 6.0E+11 8.0E+11 1.0E+12 1.2E+12 1.4E+12
Number of protons/cm2 Total number of SEE
Slope: 3.6E-12 SEEs per byte and proton/cm2 Slope: 5.4E-13 SEEs per byte and proton/cm2 ELMB128 0.35 µm technology "old" ELMB 0.5 µm technology
ELMB103 ELMB128
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RadTest: SEE results
no hard or destructive SEE found Systematic SEEs
count the errors found in bit patterns
(corrected for total fluence (1.3*1012 p/cm2) and number of bytes in test):
SRAM EEPROM FLASH CAN ADC MEGA CRC ELMB103 7733 61 73
- ELMB128
1233 27 2
microcontroller in 0.35 µm technology different technology(?) 0.50 µm technology
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RadTest: SEE results
Functional SEEs
count ‘abnormal’ behaviour, and categorize according to necessary action to fix it
13 78 Automatic recovery 1 19 Software reset 15 Power cycling ELMB128 ELMB103
(corrected for total fluence of 1.3*1012 p/cm2)
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RadTest: SEE results
Measures in software help minimize impact by SEE on application !
Watchdog Timer periodic register refresh (I/O, CAN, ADC) configuration parameters are kept in EEPROM only majority voting in CAN-message buffer management variables mask off unnecessary bits in variables in SRAM (e.g. boolean)
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