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IA-Tokio p n p n T (+) (-) (+) (-) - + Current Sbastien - - PowerPoint PPT Presentation

Sbastien Moitzheim (1) IA-Tokio p n p n T (+) (-) (+) (-) - + Current Sbastien Moitzheim, IA-Tokyo, 2012 3 (1) Sbastien Moitzheim, IA-Tokyo, 2012 4 = Thermal conductivity (W m -1 K -1 ) = Electrical conductivity ZT


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SLIDE 1

Sébastien Moitzheim IA-Tokio

(1)

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SLIDE 2
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SLIDE 3

+

p (+) n (-) p (+) n (-)

  • ΔT

Current

3 Sébastien Moitzheim, IA-Tokyo, 2012

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SLIDE 4

4 Sébastien Moitzheim, IA-Tokyo, 2012

(1)

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SLIDE 5

κ = Thermal conductivity (W m-1 K-1) σ = Electrical conductivity (Ω cm-2) α = Seebeck coefficient (V K-1)

5 Sébastien Moitzheim, IA-Tokyo, 2012

Figure of merit:

ZT ≥ 2 needed for competitiveness

(1)

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SLIDE 6

Electrical conductivity ↑ Thermal conductivity ↑ ZT ↓

6 Sébastien Moitzheim, IA-Tokyo, 2012

(1)

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SLIDE 7

Each material has its own

  • ptimal working

temperature

Choosing the right

material for the right application Important factors:

Cost Efficiency Stability

7 Sébastien Moitzheim, IA-Tokyo, 2012

(2)

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SLIDE 8

( ) Denotes research carried out in Japan Source: Thermoelectric Society of Japan, Dr. T. Kajikawa)

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SLIDE 9

 Bulk nano-silicon

 JST-CREST: “Development of High Efficient

Silicon Thermoelectric Materials using Nanostructure Control” 2012 -2017 (¥150M)

 Osaka University  AIST

9 Sébastien Moitzheim, IA-Tokyo, 2012

Bulk nano-Si Si-nanodeeltjes

Ladingstransport

Warmte wordt geblokkeerd 

Oxide nanocubes e.g. Strontium Titanate (SrTiO3)

JST Project: “Development of High-Efficiency Thermoelectric Materials and Systems” FY 2007-2013 (¥227M)

Nagoya University

Hokkaido University

Tokyo University of Science, Yamaguchi

AIST

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SLIDE 10

Sébastien Moitzheim, IA-Tokyo, 2012 10

  • 1. Use ball-milling to get silicon (Si)

particles

  • 2. Oxidize Si particles
  • 3. Etch away SiO2
  • 4. Use spark plasma sintering (SPS) to

form bulk nano-silicon Goal: ZT >1 between RT and 300 °C

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SLIDE 11

 Recently used to create the best (bulk)

thermoelectric material in USA, Nature 2012/09 (ZT = 2.4)

 However materials used (Lead Tellurium) are toxic  Japan wants to use life-friendly and abundant

materials

 World leader in Spark Plasma Sintering (SPS)

equipment is Fuji Electronic Industrial (3)

Sébastien Moitzheim, IA-Tokyo, 2012 11

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SLIDE 12

 Large variety of raw materials can be used  Fast process  New types of (nanostructured) materials

Sébastien Moitzheim, IA-Tokyo, 2012 12

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SLIDE 13

Sébastien Moitzheim, IA-Tokyo, 2012 13

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Sébastien Moitzheim, IA-Tokyo, 2012 14

 Strontium Titanate

(STO) nanocubes

 Dope with a thin shell

  • f Niobium

 And a core of

Lanthanum

Many interfaces: Low thermal conductivity  2D electron gas: high electrical conductivity

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SLIDE 15

Sébastien Moitzheim, IA-Tokyo, 2012 15