Moonsu Kim, Kyounghwan Lim and Cheoljun Bae Samsung Electronics Co., - - PowerPoint PPT Presentation

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Moonsu Kim, Kyounghwan Lim and Cheoljun Bae Samsung Electronics Co., - - PowerPoint PPT Presentation

Moonsu Kim, Kyounghwan Lim and Cheoljun Bae Samsung Electronics Co., Ltd. System LSI Division Design Trend According to advanced process node, - # of cells , voltage , random variation impact - Parametric yield loss becomes


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SLIDE 1

Moonsu Kim, Kyounghwan Lim and Cheoljun Bae Samsung Electronics Co., Ltd. System LSI Division

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SLIDE 2
  • Design Trend
  • According to advanced process node,
  • # of cells ↑, voltage ↓, random variation impact ↑
  • Parametric yield loss becomes severer
  • Design method
  • Random variation for STA
  • Semi Statistical STA instead of full SSTA: POCV(Synopsys), SOCV(Cadence)
  • Statistical equation for timing path slack
  • Industry standard: K =3

 slack = 0 means 99.865% yield guarantee for a timing path

Mean of slack Standard deviation of slack K: seed sigma

slack = uslack – K*σslack

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SLIDE 3
  • Risk of seed sigma K =3
  • Design size( or # of paths) increases, K=3 is enough?
  • # of paths increase, yield loss probability increases
  • To maximize profit of mass product
  • Reduce parametric yield loss
  • Require Yield aware Design
  • Quick & accurate estimation method of parametric timing yield during design stage
  • Find an appropriate seed sigma(K) considering yield
  • Yield aware ECO

yield of all timing paths in a core block is 99.865% yield of a core block is either 99.865%, 97.7% or 84.1%

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SLIDE 4
  • Yield computation
  • A path yield(success probability) is computed using slack distribution
  • Slack distribution is converted to z-score
  • Chip(block or core) yield:
  • Bin[i] have associated z-score range(criticality) and number of paths assigned to it
  • Assign each critical path to a bin based on z-score  Compute yield of each bin  compute yield of a chip

(generally x=0)

Yield of paths in bin[i] Probability of a path in bin[i] Yield of chip # of paths in bin[i]

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SLIDE 5
  • Overall Flow
  • Input: semi SSTA based Design DB
  • Bin based yield estimation
  • Fast but accuracy loss due to assumption of independence between paths
  • MonteCalro based yield estimation
  • More accurate than bin-based but runtime/resource overhead

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SLIDE 6
  • Seed sigma (K) decision
  • During design plan, yield estimations for different K values
  • Find minimum K which satisfies target yield
  • Decided seed sigma value is used for remain STA & ECO for sign-off
  • Overall Flow

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SLIDE 7
  • Objective: fix minor violations to meet target yield
  • Input: criticality bin
  • Method (originally LP formula  implemented as iterative greedy algorithm)
  • Phase1: Find new histogram by find X (= # of move from bin i to bin j)
  • Phase2: assign actual bin-to-bin move and realize timing ECO

If a path should move from bin i to bin j, apply ECO slack margin: Original bin

Bin index i j

New bin histogram

i j

X

Current yield Y < new yield Y’ 6/9

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SLIDE 8
  • Yield Estimation
  • Bin based yield estimation is practical than MC based
  • Runtime benefit with small accuracy loss (Table 3)
  • Yield aware ECO (Table 4)
  • Ref(Reference)
  • No target yield
  • Seed sigma: any higher value(ex. 3.5, 4.0…) than 3.0
  • After all violations are fixed , expected yield is computed by bin based yield estimation flow
  • YaE (Yield aware ECO)
  • Target yield is set to expected yield of reference
  • Seed sigma : 3.0
  • After complete Yield aware ECO to achieve target yield, expected yield is computed by bin based yield estimation flow
  • Expected yield of YaE is very close to Ref’s with less runtime and # of △buffers

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SLIDE 9
  • Comparison two Silicon data of two real projects
  • Silicon data: hold timing limited minimum voltage (Vmin)  lower is better
  • Design 1 and Design2
  • Both designs have common component (blockA, blockB, blockC)
  • blockA,B are small and blockC is big one(10X than A or B)
  • Design2’s lowest sign-off voltage < design1’s lowest sign-off voltage
  • Yield aware design is applied Design1 blockC only
  • Difficulty of apple-to-apple comparison
  • There are many differences: design style, library cell, sign-off voltage  affect Vmin result complexly
  • Very difficult to separate them from yield aware design impact
  • In-direct comparison
  • Vmin @P50 of blockA, blockB: Design1 > Design2 (Design2 is better)
  • Vmin @P50 of blockC: Design1 < Design2 (Design1 is better)  yield aware design impact
  • Spread of Vmin of blockA, blockB: Design1 is slightly better than Design2
  • Spread of Vmin of blockC: Design1 is much better than Design2  yield aware design impact

P50: 50% percentile Vmin of EDS test P90: 90% percentile Vmin of EDS test

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SLIDE 10
  • Considering design size and random variation impact on low voltage

domain, seed sigma (K) of 3 may not be sufficient for mass product yield

  • We develop practical yield aware design flow
  • Yield estimation
  • Seed sigma decision flow
  • Yield aware ECO
  • Experimental results shows runtime/accuracy of proposed yield aware

design flow

  • Silicon measurement data shows enhancement of Vmin by yield aware

design

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