Prospects for the production of high- performance solar cells in - - PowerPoint PPT Presentation
Russian Science Technology and Education Conference Minneapolis, Minnesota, October 5-9, and Phoenix, Arizona, October 12-16, 2020 Prospects for the production of high- performance solar cells in space Nikiforov A. I., Preobrazhensky V.V,
Nikiforov A. I., Preobrazhensky V.V, Pchelyakov O.P.
Rzhanov Institute of Semiconductors Physics SB RAS, Novosibirsk, Russia Russian Science Technology and Education Conference Minneapolis, Minnesota, October 5-9, and Phoenix, Arizona, October 12-16, 2020
www.isp.nsc.ru
Installation depending on directions of its use can consist of the several specialized vacuum chambers: chambers of a loading - unloading of plates – substrates (2 cartridges on 7 plates in diameter of 102 mm); chambers epitaxial growth of elementary semiconductors (Si, Ge), metal, dielectric layers are supplied with electron beam evaporators, gas and plasma sources of molecular beams; chambers for grovth of А3В5, A3N and А2В6 semiconductor compounds can contain up to 12 molecular sources, including ventille type for antimony, phosphorus and arsenic.
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«ОКА-Т-ISS» project
The equipment for molecular beam epitaxy in space Vsc
Weight, kg 230 Consumed power, kW 4,0 Duration of the experiment session, days 30 Number of sessions during active lifetime 14 Diameter of underlying substrate 100 mm
Spaceship«ОКА-Т»
Basic characteristics of МBE facility
Installation diagram of MBE
molecular screen
Creation of basic technological processes for the manufacture of a new generation of light flexible photovoltaic converters of space based solar energy on the basis of heteroepitaxial structures of AIIIBV compounds
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Al Polyimide film 50 microns Au Heterostructure Silicone layer Metallization based on ti/Al/Ti/Au layers
Жидкий азот 25°С 25°С
Flexible carrier for technology with substrate removal by dissolution
Flexible carrier ensures the safety of fragile heterostructures under mechanical influences.
Testing for resistance to bending deformations
reverse contact direct contact
Fabrication and processing of new materials, creation of semiconductor epitaxial quantum-sized nanostructures for physical research, comparative analysis of electron and optical properties of space and ground grown new objects
Development of space technology for manufactory by MBE semiconductor multilayer alternative substrates and nanostructures for micro-, nano-, optoelectronic and ultrahigh efficiency solar cells, high frequency devices, photodetectors and phototransistors, night vision systems etc. for industrial application
Blinov V.V., Zvorykin L.L., Ivanov A.I., Ignatyev А., Mashanov V. I., Preobrazhenskiy V.V., Pcheljakov O. P., Sokolov L.V. Patent “The Device for MBE Growth of Nanomaterials in an Outer Space” № 2008118835 03.04.2009
Devices with Advanced Materials
‘Atomo’-Tailored Materials
atomic layer growth of a crystalline thin film on an atomically ordered substrate
level
material also should be at a atomic level < 1014 cm-3 ≤ 10-10 N0
Useful atoms 10-4Torr Impurity Atom << 10-14 Torr
Conventional boundary of a wake
Aristotel [384-322 year B.C.] R.N. Kostoff [1970] L.Melfi at al. [1976] A.Ignatiev at al. [1986] L.L. Zvorikin at al. [1996]
Blinov V.V., Zvorykin L.L., Ivanov A.I., Ignatyev А., Mashanov V. I, Preobrazhenskiy V.V., Pcheljakov O. P., Sokolov L.V. Patent on The device for MBE growth of nanomaterials in an outer space № 2008118835 03.04/2009
The Design-Layout Scheme of “Oka-T”
Screen of I stage General view Oka -T General view Oka in a flight configuration (with opened screen MBE)
Interorbital tow The protective screen
The lock chamber and technological MBE installation The automatic machine with Ballistic capsules
The specialised container Protective cover
P > 10 - 5 Pa
АFМ
P < 10 - 14 Pa
Flight direction
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The international strategic consortium « Aerospace industrial systems »
NPO " MOLNIYA", Aerospace corporation " Nika ", NPO " Energomash“ V.P.Glushko, МОКB "Mars", CAGI. N.E.Zhukovskogo, АНТК O.K.Antonova, PTI A.F. Ioffe, ISP A.V. Rzhanova Siberian Branch RAS, at al. 25
The development of a method has played a main role in deriving of new knowledges about processes on a surface of crystals during adsorptions, desorption, accommodation, diffusion of atoms and molecules during growth of thin films and nanostructures
MBE method becomes main technology for production of multilayer heterosistems with quantum-sized structures for researches and device applications
Emerging of a new generation of technology for realization all modifications
conditions of open deep space behind a molecular screen
New generation of nanoelectronics, nanophotonics and photovoltaic
➢ Joint investigation of fundamental processes on clean surface of semiconductors and self-organization phenomena during MBE, CBE and CVD growth of nanostructures in ground and in space ultra vacuum condition ➢ Joint experimental studies, theoretical modeling and comparative analysis of electron and optical properties of space and ground grown nanostructures ➢ Joint research, development and production of new types of nanoscale heterostructures for solar cells, high frequency devices, photodetectors and phototransistors, night vision systems for industrial application, including manufactory in space ➢ Joint development and production of optimized nanotechnological equipment for MBE, CBE, CVD and so on in space orbital flight ➢ Mutual contacts, scientific and business conferences and workshops