Ring Amplifiers for Switched Capacitor Circuits
Benjamin Hershberg1, Skyler Weaver1, Kazuki Sobue2, Seiji Takeuchi2, Koichi Hamashita2, Un-Ku Moon1
1Oregon State University, Corvallis, OR, USA 2Asahi Kasei Microdevices, Atsugi, Japan
Ring Amplifiers for Switched Capacitor Circuits Benjamin Hershberg 1 - - PowerPoint PPT Presentation
Ring Amplifiers for Switched Capacitor Circuits Benjamin Hershberg 1 , Skyler Weaver 1 , Kazuki Sobue 2 , Seiji Takeuchi 2 , Koichi Hamashita 2 , Un-Ku Moon 1 1 Oregon State University, Corvallis, OR, USA 2 Asahi Kasei Microdevices, Atsugi, Japan
1Oregon State University, Corvallis, OR, USA 2Asahi Kasei Microdevices, Atsugi, Japan
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+ VIN VOUT
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RST
VCMX VIN ±VREF CLOAD
RST RST
VCMO
Example MDAC Feedback Structure
AMP
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RST
VCMX=0.6V VIN ±VREF CLOAD
RST RST
VCMO
Example MDAC Feedback Structure
VIN VOUT
RST
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
VCMX = 0.6V (ideal settled input value)
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RST
VCMX VIN ±VREF CLOAD
RST RST
VCMO
Example MDAC Feedback Structure
+
RST RST RST
+VOS-
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 0mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
+ VAN VIN VOUT VA VBP VBN VAP
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 0mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
+ VAN VIN VOUT VA VBP VBN VAP
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 0mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
+ VAN VIN VOUT VA VBP VBN VAP
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 0mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
+ VAN VIN VOUT VA VBP VBN VAP
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 200mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 200mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 250mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 300mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 350mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 400mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 250mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
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+VOS-
+VOS-
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2
– VOV = VDD – Can be very small, even for large CLOAD – Decouples internal speed vs. output load requirements
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– Inverter td, crowbar current, parasitic C’s – Digital power-delay product scaling benefits apply
td VDD IAVG PDP = VDD·IAVG·td = Etot DIN DOUT CGS
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– 50dB: Input-referred dead-zone size will limit accuracy – 90dB: dynamic pinch-off effects maintain high accuracy – VOV pinchoff: decreases VDSAT, decreses ID, increases ro
1 2 3 4 5 6 7 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Volts time (ns) Small Swing Medium Swing Large Swing 1 2 3 4 5 6 7 0.55 0.6 0.65 Volts time (ns) Small Swing Medium Swing Large Swing
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– Generalized form of Correlated Level Shifting (CLS)
CCLS VOUT
ФS ФA
VIN
ФA
VCMO
ФS
(+/-Vr,0)
AΦ1 AΦ2
Vx VCLS
AMP1 AMP2
VCMO
ФS
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CCLS VOUT
ФS ФA
VIN
ФA
VCMO
ФS
(+/-Vr,0)
AΦ1 AΦ2
Vx VCLS
AMP1 AMP2
VCMO
ФS
Amplifier Design Requirements Ф1 Ф2 Output Swing Large Small Slew Rate Large Small
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CCLS VOUT
ФS ФA
VIN
ФA
VCMO
ФS
(+/-Vr,0)
AΦ1 AΦ2
Vx VCLS
AMP1 AMP2
VCMO
ФS
Amplifier Design Requirements Ф1 Ф2 Output Swing Large Small Slew Rate Large Small
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3b
CU = 200 fF
3b
CU = 100 fF
3b
CU = 50 fF
Uses Split-CLS: Ring Amp + Telescopic Opamp Uses Ring Amp Only
3b
CU = 50 fF
3b
CU = 50 fF
3b
CU = 50 fF
3b
FLASH
VIN+
includes 16CU total (differential) dummy load
VIN-
3b: 2b + 1b redundancy (MDAC gain of 4 per stage)
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±VREF
VIN+ VO+
ΦSE ΦS ΦA
RAMP
VCMX
CU
CLR
±VREF
VIN+
ΦS CU
VCMO VOTA_CM
2CU
CLR
±VREF
VIN- VO-
ΦSE ΦS ΦA
RAMP
CU
CLR
±VREF
VIN-
ΦS x6 (8 total) CU
VCMO
2CU
CLR
CCLS
ΦSE ΦSE ΦCLS ΦA ΦA
OTA
x6 (8 total)
CCLS
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±VREF
VIN+ VO+
ΦS ΦA
RAMP
CU ±VREF
VIN+
ΦS CU
VCMO VOTA_CM
2CU ±VREF
VIN- VO-
ΦSE ΦS ΦA
RAMP
CU ±VREF
VIN-
ΦS x6 (8 total) CU
VCMO
2CU
CCLS
ΦSE ΦSE ΦCLS ΦA ΦA
OTA
x6 (8 total)
CCLS
ΦSE
VCMX
ΦSE ΦA ΦA 34
±VREF
VIN+ VO+
ΦS ΦA
RAMP
CU ±VREF
VIN+
ΦS CU
VCMO
2CU ±VREF
VIN- VO-
ΦSE ΦS ΦA
RAMP
CU ±VREF
VIN-
ΦS x6 (8 total) CU
VCMO
2CU ΦSE ΦSE ΦA ΦA x6 (8 total) ΦSE
VCMX
ΦSE ΦA ΦA 35
VIN+ VOUT+ VRP
REFRESH REFRESH
VRN
REFRESH
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VIN+ VOUT+ VRP
FRONT ENABLE REFRESH REFRESH
VRN
REFRESH ENABLE ENABLE ENABLE ENABLE
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VIN+ VOUT+ VRP
FRONT ENABLE REFRESH REFRESH
VRN
REFRESH ENABLE ENABLE ENABLE ENABLE
VCMO
CMFB network
Identical ring amp for negative MDAC path
REFRESH
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Bias Network
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Bias Network
Incremental bias voltage sampled Voltage Kickback Correct bias charge trapped
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Bias Network
Bias charge refreshed No Voltage Kickback
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60 65 70 75 80 85 90 95 100 2 4 6 8 10 dB Input Frequency (MHz) SNDR SNR SFDR ERBW > 10 MHz
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40 45 50 55 60 65 70 75 80
0.00 SNDR (dB) Vin (dBFS)
VDDA = 1.3V VFS = 2.5V pk-pk diff
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64 66 68 70 72 74 76 78
50 100 SNDR (dB) 1st stage dead-zone (mV differential pk-pk)
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64 66 68 70 72 74 76 78 1150 1200 1250 1300 1350 1400 1450 1500 SNDR (dB) Supply Voltage (mV) Vrefp = 1275mV
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Technology 0.18µm 1P4M CMOS Resolution 15 bits Analog Supply 1.3 V Sampling rate 20 Msps ERBW 10 MHz Input Range 2.5 V pk-pk diff. SNDR 76.8 dB SNR 77.2 dB SFDR 95.4 dB ENOB 12.5 bits Total Power 5.1 mW FoM 45 fJ/c-step
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1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 10 20 30 40 50 60 70 80 90 100 110 120
P/fs [pJ] SNDR [dB]
ISSCC 2011 VLSI 2011 ISSCC 1997-2010 VLSI 1997-2010 This Work FOM=100fJ/conv-step FOM=10fJ/conv-step
This Work
Best power efficiency of any high-resolution ADC ever reported (nyquist or oversampling)
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60 64 68 72 76 80
20 40 60 80 100 SNDR (dB) 1st Stage Deadzone (mV pk-pk differential)
Chip 1 Chip 2 + 1.3dB
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30 35 40 45 50 55 60 3 5 7 9 11 13 15 17 SNDR
(ns)
SNDR vs. Ring Amp Timing (with opamps off)
20 40 60 80 100 10 30 50 70 90 SNDR (dB) fs (MHz)
Peak SNDR vs. Sampling Frequency
~55dB plateau
Test method 1:
Increase fs until opamps don’t have enough time to turn on.
Test method 2:
Power down opamps, and adjust the time the ring amps are allowed to settle.
~55dB plateau
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re-connected to the chip signal input:
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– Answer: No!
– Current pinches off, increasing ro – VOV shrinks, decreasing VDSAT – High gain preserved, even when VDS is very small
– Yes, but doesn’t actually matter… – Small dead-zone: compression immune – Large dead-zone: some compression (lower accuracy anyway)
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1000 2000 3000 4000 5000 6000 7000 8000
0.5 DIFFERENTIAL NONLINEARITY vs. DIGITAL OUTPUT CODE DIGITAL OUTPUT CODE DNL (LSB for 13b) 1000 2000 3000 4000 5000 6000 7000 8000
1 2 INTEGRAL NONLINEARITY vs. DIGITAL OUTPUT CODE DIGITAL OUTPUT CODE INL(LSB for 13b)
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800 850 900 950
100 200 300 Global Ring Amp Current (uA) Deadzone (mV pk-pk differential)
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1995 2000 2005
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 250mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns)
+ VAN VIN VOUT VA VBP VBN VAP
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1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 Volts time (ns)
VDEADZONE = 250mV
1.2 1 0.8 0.6 0.4 0.2 1 2 3 4 5 6
Volts time (ns) 1) Dead-zone shifts input
2) Finite gain of stg2 causes VOV to desaturate 3) Output current pinches off, locks into dead-zone
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+ VAN VIN VOUT VA VBP VBN VAP
1 2 3 4 5 20 40 60 Ring Amp Supply Current (mA) Skip Cycles per Refresh Cycle
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