Sub-6GHz 5G TDD Wireless Infrastructure Block Diagram High Power - - PowerPoint PPT Presentation

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Sub-6GHz 5G TDD Wireless Infrastructure Block Diagram High Power - - PowerPoint PPT Presentation

Feb 02, 2024 895 likes •1.08k views

Sub-6GHz 5G TDD Wireless Infrastructure Block Diagram High Power Switch - LNA MAIA-011002 MAIA-011004 MAMF-011069 High Power Switch MAMF-011070 MASW-000822 MAMF-011119 MASW-000825 MASW-000834 MASW-000932 MASW-000936 MASW-011120 2

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SLIDE 1

Sub-6GHz 5G

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SLIDE 2

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TDD Wireless Infrastructure Block Diagram

High Power Switch MASW-000822 MASW-000825 MASW-000834 MASW-000932 MASW-000936 MASW-011120 High Power Switch - LNA MAIA-011002 MAIA-011004 MAMF-011069 MAMF-011070 MAMF-011119

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SLIDE 3

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Complete Portfolio of Sub-6GHz 5G High Power Switch and m-MIMO Switch – LNA Modules

0.6 1.8 2.3 2.7 3.5 5.0 Frequency (GHz) Average Power

MAMF-011070, Switch-Bias module, 0.03-6 GHz

120W 100W 60W 20W 10W

MAIA-011004, Switch-LNA module, 0.4-5 GHz MAIA-011002, Switch-LNA module, 0.4-4 GHz MAMF-011069, Dual Switch-LNA, 1.8-3.9 GHz MAMF-011119, Single Switch-LNA, 2.3-5.0 GHz MASW-011120, High Power Switch, 0.03-6 GHz PIN Diode Switch - LNA Module Key Attributes: > High input power handling: up to 120W LTE for 5G Macro applications > Super low Tx insertion loss > Low NF: 1.0dB @ 2.7 GHz > 5 mm QFN packages SOI Switch - LNA Module Key Attributes: > Single Channel architecture for 5G m-MIMO applications > Broadband: 2.3 – 5.0 GHz > 50 Ohm internally matched at both input & output > High power handling: 10-20W LTE > Low NF: 1.3dB typical > 6 mm QFN Packages

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SLIDE 4

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> Features:

  • Broadband Performance: 0.03 – 6.0 GHz
  • Low Loss: Tx = 0.3 dB, Rx = 0.4 dB at 2.7 GHz
  • High Isolation: Rx = 43 dB at 2.7 GHz
  • Up to 125 W CW Power Handling at 85 ºC
  • Single +5 V DC supply
  • Compatible with 1.8 V and 3.3 V logic
  • Lead-Free 5 mm 20-Lead HQFN Package

> Additional Information:

  • Export Compliance; ECCN EAR99
  • Demo Boards Available

Functional Schematic

MAMF-011070

High Power Switch with Integrated Bias Control

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> Features:

  • 2-Stage LNA and High Power Switch
  • High RF Input Power:
  • 120 W CW @ +85°C, 2.0 GHz
  • 100 W CW @ +85°C, 2.7 GHz
  • Noise Figure:
  • 0.85 dB @ 2.0 GHz
  • 1.0 dB @ 2.7 GHz
  • Gain:
  • 37 dB @ 2.0 GHz
  • 34 dB @ 2.7 GHz
  • OIP3: 36 dBm
  • Lead-Free 5 mm 32-lead HQFN

> Additional Information:

  • Export Compliance; ECCN EAR99
  • Demo Boards Available

Functional Schematic Gain OIP3 NF

MAIA-011004

High Power Switch - LNA Module, 0.4 – 5.0 GHz

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MAMF-011119

Single Channel Integrated Switch LNA Module, 2.3 – 5.0 GHz

> Features:

  • Broadband: 2.3 – 5.0 GHz
  • RX Mode:
  • Gain: 34 dB typ.
  • NF: 1.3 dB typ.
  • Input IP3: -4 dBm typ.
  • TX Mode:
  • IL: 0.4 dB typ.
  • P0.1dB: 40.5 dBm typ.
  • Single 5 V Supply
  • Integrated Control Circuitry with 1.8 V Logic
  • 50 Ohm Internally Matched Input & Output
  • Lead-Free 6x6 mm 20 Lead QFN Package

> Additional Information:

  • Export Compliance; ECCN EAR99

Application Schematic Functional Schematic

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SLIDE 7

mmWave 5G

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SLIDE 8

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5G Analog Beamforming Typical System Architecture

Antenna Switch PA DSA Mixer LNA VVA VCO

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MAAP-011246

2W, Power Amplifier, 27.5 - 31.5 GHz

> Features:

  • Bias: 6V & Idq=900mA
  • Gain: 23dB
  • PSAT: 33dBm @ 6V & Id of 1600mA
  • P1dB: 31dBm
  • OIP3: 37dBm
  • 50ohm in/out internally matched
  • 5x5mm 32-lead QFN

> Additional Information:

  • Export Compliance; ECCN EAR99
  • Demo Boards Available

Functional Schematic Gain Psat OIP3

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MAAP-011250

4W, Power Amplifier, 27.5 - 30 GHz

> Features:

  • Bias: 6V & Idq=2300mA
  • Gain: 24dB
  • PSAT: 36dBm @ 6V & Id=3300mA
  • P1dB: 34.8dBm
  • OIP3: 38dBm
  • PAE: 18% @ PSAT
  • 50ohm in/out internally matched
  • Integrated Power Detector
  • 5x5mm 32-lead QFN

> Additional Information:

  • Export Compliance; ECCN EAR99
  • Demo Boards Available

VG

VG

C2 R2

VG

R1

VD1

R4

VD2

R5

VD1 VD2 VD3

VD1 VD2

R8 R7 C12

DET

VDET

C1 C4 C5 R3 C3 C10 C9

VG VD1 VD2 VD3

C11 C8 C7 R6 C6

RFIN RFOUT

Functional Schematic Gain Psat OIP3 Psat OIP3

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MASW-011098

13W CW, Ka-Band Reflective AlGaAs SPDT PIN Diode Switch, 26 – 40GHz

> Features:

  • IL RFC to RF1 or 2: 0.85dB @ 30GHz
  • Isolation Off State: 29dB @ 30GHz
  • CW Power On State of 13W at 85 °C, VR=-25V
  • T
  • n/T
  • ff: 30/21nsec @ 26.5GHz
  • TRISE/TFALL: 10/8 nsec @ 26.5GHz
  • Integrated DC Block and RF Bias Networks
  • Available in a Lead-Free 5x5 mm 20-Pin

Laminate Package

> Additional Information:

  • Export Compliance; ECCN EAR99
  • Demo Boards Available

IL Isolation: RFcommon to RFx Functional Diagram IL (Reverse Bias)

RF2 RFC B1 B2

L L C C C C C C

SW1 SW2

GND GND GND GND N/C N/C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 20 19 18 17 16 RF1 GND GND N/C N/C N/C N/C N/C N/C N/C

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MAAL-011129

16dBm P1dB, Broadband Low Noise Amplifier, 18 – 31.5 GHz

> Features:

  • Gain: 23 dB @ 24 GHz
  • Noise Figure: 2.5 dB @ 24 GHz
  • P1dB: 16 dBm @ 24 GHz
  • Output IP3: 25 dBm @ 24 GHz
  • VDD = 3 to 5 V
  • Power Down Capability
  • Available in a Lead-Free 2x2 mm 8-Pin PDFN

Package

  • 50 Ohm Internally Matched Input & Output

> Additional Information:

  • Export Compliance; ECCN EAR99
  • Demo Boards Available
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SLIDE 13

mmWave 5G T&M

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MAAM-011238

Wideband Amplifier, 100 kHz – 50 GHz

> Features:

  • Gain: 14 dB @ 6 V, 30 GHz
  • P1dB: 17 dBm @ 6 V, 30 GHz
  • P3dB: 18.5 dBm @ 6V, 30 GHz
  • VDD = 4 - 6 V, ID = 125 - 150 mA
  • Integrated Power Detector
  • Package: 5mm 12L SMT
  • 50 Ohm Internally Matched Input & Output

> Additional Information:

  • Export Compliance; ECCN 3A001.b.2.d
  • Demo Boards Available

Functional Schematic

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MAAL-011141

Broadband Low Noise Amplifier, DC – 28 GHz

> Features:

  • Gain: 17.5 dB @ 8 GHz
  • Noise Figure: 1.4 dB @ 8 GHz
  • P1dB: 16 dBm @ 8 GHz
  • Output IP3: 27.5 dBm @ 8 GHz
  • VDD = 5 to 10 V
  • Power Down Capability
  • Available as bare DIE and in a Lead-Free 5x5 mm

32-Pin AQFN Package

  • 50 Ohm Internally Matched Input & Output

> Additional Information:

  • Export Compliance; ECCN EAR99
  • Demo Boards Available
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MAMX-011054

Broadband Double-Balanced Mixers, 18 - 46 GHz

> Features:

  • Conversion Loss: 6.5 dB
  • Input IP3: 20 dBm
  • LO Power: 15 dBm
  • IF Bandwidth: DC – 20 GHz
  • High Isolation
  • Available as DIE and in a Lead-Free 3x3 mm 12-

Pin PQFN Package

  • 50 Ohm Internally Matched

> Additional Information:

  • Export Compliance; ECCN EAR99
  • Demo Boards Available

Production

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MASW-011102

SPDT Non-Reflective Switch, DC – 30 GHz

> Features:

  • Low Insertion Loss: 1.8 dB @ 30 GHz
  • High Isolation: 40 dB @ 30 GHz
  • Input P1dB: 24 dBm
  • Input IP3: 45 dBm
  • Available in a Lead-Free 3x3 mm 14-Pin PQFN

Package

  • Fast Switching Speed

> Additional Information:

  • Export Compliance; ECCN EAR99
  • Demo Boards Available
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SLIDE 18

18 Topology Frequency (GHz) Insertion Loss (dB) Isolation (dB) P1dB (dBm) Reflective

  • r

Absorptive Bias (mA) Part Number Package

SPST 0.05 - 18 18 – 50 0.2 0.3 22 46 23 Reflective 10 MA4AGSW1 DIE SPST 10-50 1.2 30 23 Absorptive 10 MA4AGSW1A DIE SP2T 0.05 - 18 18 – 50 0.5 0.7 47 33 23 Reflective 10 MA4AGSW2 DIE SP3T 0.05 - 18 18 – 50 0.6 0.8 45 31 23 Reflective 10 MA4AGSW3 DIE SP4T 0.05 - 18 18 – 50 0.7 1.0 41 32 23 Reflective 10 MA4AGSW4 DIE SP5T 0.05 - 18 18 – 50 1.4 1.9 35 30 23 Reflective 10 MA4AGSW5 DIE SP8T 0.05 - 18 18 - 50 1.5 2.0 32 32 23 Reflective 10 MA4AGSW8-1 DIE

AlGaAs PIN Diode Switches