MESFET Care must be given to velocity saturation effects, which - - PowerPoint PPT Presentation

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Oct 07, 2022 302 likes •365 views

MESFET Care must be given to velocity saturation effects, which already appear at 3 kV/cm (~ 10 kV/cm in silicon) E.g., L =0.25 um, V DS =0.1 V give so that the transistor saturates not when pinch-off is reached close to the drain, but when v sat

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MESFET

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Care must be given to velocity saturation effects, which already appear at 3 kV/cm (~ 10 kV/cm in silicon) E.g., L=0.25 um, VDS=0.1 V give so that the transistor saturates not when pinch-off is reached close to the drain, but when vsat is reached by the electrons. We get an almost linear dependence of ID on VGS (instead of quadratic)

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