New Models for Burn-In of Semiconductor Devices Horst Lewitschnig - - - PowerPoint PPT Presentation

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

New Models for Burn-In of Semiconductor Devices

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria 2015-10-17 - Daejeon - South Korea

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

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Burn-In today vs. new concepts

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Countermeasure Model

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Synergy Model

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Multiple Reference Products

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Area Specific Scaling

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Publication List

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

1

Burn-In today vs. new concepts

2

Countermeasure Model

3

Synergy Model

4

Multiple Reference Products

5

Area Specific Scaling

6

Publication List

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Bathtub curve

Bathtub curve

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Burn in - Elimination of Early life

Early Fails Means to weed out early life fails: DD-screening Stress tests Outlier detection ... Burn-In Burn-In is one method amongst many others to eliminate early life fails.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Burn-In today

2 Concepts Random sampling: 100 % Burn-In

Optimization by Burn-In time reduction.

Burn-In study

Random samples are taken out of production and put into burn-in. In parallel 100 % Burn-In, as long as the Burn-In study is not passed. If the Burn-In study is pass, switch to BI-monitoring.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Burn-In today

p @ 90 % CL Random sampling: 0/100000 = 23 ppm @ 90 % CL; 0/350000 = 6.6 ppm @ 90 % CL; 1 ppm @ 90 % CL = 0/2.31 Mio. Beyond Sampling Pure random sampling gives limited results. The idea is to include further information to the random sample. On the following pages some of these ideas are introduced.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Burn In - new concepts

Extended approach The classical approach looks only at the random sample. The extended approach takes further information into account:

Countermeasure model: The efficiency of countermeasures as well as the overall performance of BI-studies is taken into account. Multiple reference products: In case of two or more reference products, an exact area scaling is now possible. Synergy model: Information about equal chip subsets, that have already passed Burn-In studies, are used. Area specific scaling: If different chip subsets show different ppm-values, referencing is done on these area-specific levels.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

1

Burn-In today vs. new concepts

2

Countermeasure Model

3

Synergy Model

4

Multiple Reference Products

5

Area Specific Scaling

6

Publication List

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Idea: Burn In Fails and Countermeasures - Estimation of p

1 Burn In Fail, Countermeasure α % effective 0.1 = α · B(0; n, p) + (1 − α) · B(1; n, p) Effectiveness The effectiveness of a countermeasure reflects expert knowledge, available data, ... It is a prior distribution. We propose to use the 10 % - quantile of this prior distribution.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Idea: Burn In Fails and Countermeasures - Estimation of p

Example n = 100 k pcs., 1 Burn In fail, countermeasure 80 % effective. 0.1 = 0.8 · B(0; n, p) + 0.2 · B(1; n, p). Solution without countermeasure: p = 39 ppm @ 90% CL, with countermeasure: p = 27 ppm @ 90% CL.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Burn In Fails and Countermeasures - full picture

Burn In Fail with Countermeasure - full picture Let’s assume we put 100 k devices to burn in with 1 fail, introduce a countermeasure with 80 % effectiveness, and burn again 100 k pcs. with no fails. Taking all information into account, this results in 0.1 = 0.8 · B(0; 200000, p) + 0.2 · B(1; 200000, p), → 13.7 ppm @ 90 % CL.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

1

Burn-In today vs. new concepts

2

Countermeasure Model

3

Synergy Model

4

Multiple Reference Products

5

Area Specific Scaling

6

Publication List

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Synergy Model

Let’s assume two technologies which only differ in the metal block:

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Synergy Model

Let’s say technology 1 had 250 k pcs. in Burn-In, technology 2 had 100 k pcs. in Burn-In. Products are assembled from all combinations of their subsets (combinatorial model):

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Synergy Model

Example - Comparison If we look only at technology 2:

1 / 100000 pcs. → 39 ppm @ 90 % CL.

If we look at technology 1 and 2:

1 / (100000 + 250000) pcs. for the substrate 0 / 100000 pcs. for the metal block → 29 ppm @ 90 % CL.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

1

Burn-In today vs. new concepts

2

Countermeasure Model

3

Synergy Model

4

Multiple Reference Products

5

Area Specific Scaling

6

Publication List

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Multiple Reference Products

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Multiple Reference Products

Reference products 1 and 2 are built up with elements of size Agcd 1 fail at reference product 2 can be caused by 1 or several failed elements of size Agcd failed on the same chip (probabilities based on hypergeometric distribution). (all possibilities to built up reference products 1 and 2, pgcd) = 0.1, → numerical solution for pgcd

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Multiple Reference Products

Example Reference Product 1: 5 mm2, 0/100000 pcs, 23 ppm @ 90 % CL; Reference Product 2: 12 mm2, 1/100000 pcs, 39 ppm @ 90 % CL.

→ Agcd = 1 mm2, → pgcd = 2.3 ppm @ 90 % CL,

For a follower product with 7 mm2: p = 16 ppm @ 90 % CL

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

1

Burn-In today vs. new concepts

2

Countermeasure Model

3

Synergy Model

4

Multiple Reference Products

5

Area Specific Scaling

6

Publication List

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Area scaling

Likelihood for a defect per device scales with the die size.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Burn-in study

Figure: Reference and follower products per technology

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Follower product - same CMOS, 3 x bigger DMOS

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Separate area scaling - example

Follower product - same CMOS, 3 x bigger DMOS Reference Product: 1/100k → 39 ppm @ 90 % CL Classical area scaling: 78 ppm @ 90 % CL, Separate area scaling: 65 ppm @ 90 % CL.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

1

Burn-In today vs. new concepts

2

Countermeasure Model

3

Synergy Model

4

Multiple Reference Products

5

Area Specific Scaling

6

Publication List

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Publications

Publications Countermeasure Model: Decision-Theoretical Model for Failures Which are Tackled by Countermeasures; Kurz, Lewitschnig, Pilz; IEEE Trans. Reliability, Vol. 63, No. 2, June 2014.

R-package GenBinomApps, Lewitschnig and Lenzi, 2014.

Synergy Model: Modeling of chip synergies for failure probability estimation in semiconductor manufacturing; Kurz, Lewitschnig, Pilz; applied to: Journal of Applied Statistics. Multiple Reference Products: Failure probability estimation with differently sized reference products for semiconductor burn-in studies; Kurz, Lewitschnig, Pilz; Applied Stochastic Models in Business and Industry, online since Dec. 2014.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling

Publications

Publications Area Specific Scaling: An advanced area scaling approach for semiconductor burn-in; Kurz, Lewitschnig, Pilz; Microeletronics Reliability, Vol. 55, Issue 1, January 2015 Acknowledgment: The work has been performed in the project EPT300, co-funded by grants from Austria, Germany, Italy, The Netherlands and the ENIAC Joint Undertaking. This project is co-funded within the programme ”Forschung, Innovation und Technologie f¨ ur Informationstechnologie” by the Austrian Ministry for Transport, Innovation and Technology.

Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria New Models for Burn-In of Semiconductor Devices